发明名称 PROBABILISTIC ERROR CORRECTION IN MULTI-BIT-PER-CELL FLASH MEMORY
摘要 Data that are stored in cells of a multi-bit-per cell memory (42) according to a systematic or non-systematic ECC, are read and corrected (systematic ECC) or recovered (non- systematic ECC) in accordance with estimated probabilities that one or more of the read bits are erroneous. In one method of the present invention, the estimates are a priori. In another method of the present invention, the estimates are based only on aspects of the read bits that include significances or bit pages of the read bits. In a third method of the present invention, the estimates are based only on values of the read bits. Not all the estimates are equal.
申请公布号 WO2007046084(A3) 申请公布日期 2009.04.09
申请号 WO2006IL01175 申请日期 2006.10.15
申请人 RAMOT AT TEL-AVIV UNIVERSITY LTD.;LITSYN, SIMON;ALROD, IDAN;SHARON, ERAN;MURIN, MARK;LASSER, MENACHEM 发明人 LITSYN, SIMON;ALROD, IDAN;SHARON, ERAN;MURIN, MARK;LASSER, MENACHEM
分类号 G11C29/00;H03M13/00 主分类号 G11C29/00
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