发明名称 |
METHODS OF FORMING A NANOCRYSTAL |
摘要 |
<p>Methods of forming a nanocrystal are provided. The nanocrystal may be a binary nanocrystal of general formula M1A or of general formula M1O, a ternary nanocrystal of general formula M1M2A, of general formula M1AB or of general formula M1M2O or a quaternary nanocrystal of general formula M1M2AB. M1 is a metal of Groups II - IV, Group VII or Group VIII of the PSE. A is an element of Group VI or Group V of the PSE. O is oxygen. A homogenous reaction mixture in a non-polar solvent of low boiling point is formed, that includes a metal precursor containing the metal M1 and, where applicable M2. For an oxygen containing nanocrystal the metal precursor contains an oxygen donor. Where applicable, A is also included in the homogenous reaction mixture. The homogenous reaction mixture is under elevated pressure brought to an elevated temperature that is suitable for forming a nanocrystal.</p> |
申请公布号 |
WO2009045177(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
WO2008SG00381 |
申请日期 |
2008.10.03 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;YE, ENYI;KHIN, YIN WIN;HAN, MINGYONG |
发明人 |
YE, ENYI;KHIN, YIN WIN;HAN, MINGYONG |
分类号 |
C30B28/04;B82B3/00;C30B29/00 |
主分类号 |
C30B28/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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