| 摘要 |
<p>A non-volatile semiconductor storage device and method of manufacturing the same is provided to suppress the deterioration of the reliability of the semiconductor device by forming the thickness of a drain gate insulating layer with a certain thickness. A non-volatile semiconductor storage device(100) is composed of a memory transistor region(12), a word-line driving circuit(13), a source side select gate line(SGS) driver circuit(14), drain section select gate line(SGD) driver circuit(15), and a sense amplifier(16). The memory transistor region has a memory transistor in which data is stored, and the word-line driving circuit controls a voltage applied to the word line. The source side selection gate line drive circuit controls voltage supplied to the source side select gate line. The drain section selection gate line drive circuit controls a voltage applied to the drain section select gate line. The sensed electrical potential sensed by the memory transistor is amplified. The memory transistor is formed by laminating the semiconductors.</p> |
