发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of reducing a thickness of a semiconductor chip such as an IC chip. SOLUTION: A semiconductor substrate provided with an integrated circuit is polished by CMP or the like, and the semiconductor substrate is made into a thin film by forming an embrittlement layer in the semiconductor substrate and separating a part of the semiconductor substrate. Thus, semiconductor chips such as IC chips which are thinner than ever are obtained. Moreover, wiring provided on such thinned IC chips and wiring provided on an interposer are electrically connected through a conductive film formed of conductive material or formed by plating process. COPYRIGHT: (C)2009,JPO&INPIT
|
申请公布号 |
JP2009076883(A) |
申请公布日期 |
2009.04.09 |
申请号 |
JP20080209459 |
申请日期 |
2008.08.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;YUGAWA MIKIO |
分类号 |
H01L21/02;H01L21/265;H01L21/3205;H01L21/60;H01L23/52;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|