| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of suppressing occurrence of a dangling bond. SOLUTION: The method for manufacturing a semiconductor device includes steps of: forming a semiconductor film; forming an impurity region and a channel formation region in the semiconductor film by adding an impurity element of a single conduction type to the semiconductor film; forming a gate insulating film and a gate electrode on the semiconductor with an island shape; forming an insulating film containing fluorine, to cover the semiconductor film, the gate insulating film and the gate electrode; heating the semiconductor film and the insulating film containing fluorine; and, after heating the insulating film containing fluorine, forming interconnections to be electrically connected to the impurity region, on the insulating film containing fluorine. The insulating film containing fluorine is any one of a silicon oxide film containing fluorine, a silicon oxide film containing fluorine and nitrogen, and a silicon nitride film containing fluorine. COPYRIGHT: (C)2009,JPO&INPIT |
