| 摘要 |
PROBLEM TO BE SOLVED: To provide a two-wavelength semiconductor laser device suppressing the cause of a failure because of a diffusion of a dopant, and to provide a manufacturing method thereof. SOLUTION: This two-wavelength semiconductor laser device is manufactured by integrating a first semiconductor laser element 1 and a second semiconductor laser element 2 on a substrate 10 composed of a compound semiconductor, wherein a constituting material for an etching stop layer 15 of the first semiconductor laser element 1 is a material in which impurities are harder to diffuse than in a constituting material for an etching stop layer 25 of the second semiconductor laser element 2. COPYRIGHT: (C)2009,JPO&INPIT
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