发明名称 INDIUM OXIDE TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING THE SAME
摘要 <p>Disclosed is a transparent conductive film which is formed as an amorphous film by using a sputtering target containing an oxide sintered body which contains indium oxide, and if necessary tin, while containing an additional element having an oxygen binding energy of 100-350 kJ/mol (excluding Ba, Mg and Y) in an amount of not less than 0.0001 mole but less than 0.10 mole per 1 mole of indium. The transparent conductive film contains indium oxide, and if necessary tin, while containing the additional element.</p>
申请公布号 WO2009044893(A1) 申请公布日期 2009.04.09
申请号 WO2008JP68102 申请日期 2008.10.03
申请人 MITSUI MINING & SMELTING CO., LTD.;TAKAHASHI, SEIICHIRO;MIYASHITA, NORIHIKO 发明人 TAKAHASHI, SEIICHIRO;MIYASHITA, NORIHIKO
分类号 C23C14/08;H01B5/14;C23C14/34;H01B13/00 主分类号 C23C14/08
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