发明名称 METHOD AND APPARATUS FOR CONTROLLING CHARGE TRANSFER IN CMOS SENSORS WITH A TRANSFER GATE WORK FUNCTION
摘要 An improved CMOS sensor integrated circuit is disclosed comprising a photodiode, a transfer gate device, a reset transistor, a source- follower transistor, and a row-select transistor. The pinned photodiode comprises a deep n-type low-dose implant and a shallow n-type ring-shaped high-dose implant. The deep implant determines the collection depth of the photodiode; whereas the ring shallow implant increases the capacity around the edges of the photodiode and reduces the time for charge transfer.
申请公布号 WO2006073798(A3) 申请公布日期 2009.04.09
申请号 WO2005US46083 申请日期 2005.12.20
申请人 ESS TECHNOLOGY, INC.;TOROS, ZEYNEP;MANN, RICHARD;BENCUYA, SELIM 发明人 TOROS, ZEYNEP;MANN, RICHARD;BENCUYA, SELIM
分类号 H01L27/146 主分类号 H01L27/146
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