| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate manufacturing method capable of forming of a through hole in a favorable shape and preventing the side of a cavity from being roughened by etching at forming the through hole. <P>SOLUTION: Before forming a cavity 22, a silicon substrate 31 is anisotropically etched from the plane 31B side of the silicon substrate 31 to form a through hole 24. After that, an insulating film 35 is formed on the surface of the silicon substrate 31 at a part exposed to the through hole 24 and both sides 31A and 31B of the silicon substrate 31. After that, an opening 35A is formed at the insulating film 35 formed on the surface 31A of the silicon substrate 31. Then, the etching of the silicon substrate is performed with the insulating film 35 having the opening 35A as a mask, and a cavity 22 is formed in such a manner as to expose the insulating film 35 at a part formed at least on the bottom surface 24B of the through hole 24. <P>COPYRIGHT: (C)2009,JPO&INPIT |
