| 摘要 |
PROBLEM TO BE SOLVED: To obtain contact resistance similar to that in a top-contact FET, and to produce a microstructure which is as small as a bottom-contact FET. SOLUTION: The semiconductor device has a gate electrode 11, a gate insulating film 12 which is formed on the gate electrode 11, a semiconductor layer 13 which is formed on the gate insulating film 12 and source/drain electrodes 14 and 15 which are formed on the gate insulating film 12, on both ends of the semiconductor layer 13. The source/drain electrodes 14 and 15 have overhanging parts 16, which extend toward the semiconductor layer 13. The undersides of the overhanging parts 16, facing to the insulating film 12, are connected with at least a part of the semiconductor layer 13. COPYRIGHT: (C)2009,JPO&INPIT
|
