| 摘要 |
PROBLEM TO BE SOLVED: To prevent pollution of the surroundings in crystallizing an upper electrode of a ferroelectric capacitor used for a ferroelectric memory or the like. SOLUTION: This manufacturing method of a semiconductor device includes processes of: forming capacitor lower electrode films 16, 17 and 18 through an insulation film 12 on a semiconductor substrate 1; growing a ferroelectric film 19 on the lower electrode films 16, 17 and 18 at a first temperature by an organic metal vapor-phase epitaxial method; and heating the ferroelectric film 19 at a second temperature lower than the first temperature in a depressurized atmosphere including ozone. Thereby, the surroundings are prevented from being polluted in crystallizing the upper electrode. COPYRIGHT: (C)2009,JPO&INPIT
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