| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting element which can perform high output operation with a high reliability and a good reproducibility. SOLUTION: The semiconductor light emitting element of edge emission type includes a substrate 1, a first conductivity cladding layer 2 laminated on the substrate 1, an active region layer 15 including an active layer 5 laminated on the first conductivity cladding layer 2, a second conductivity cladding layer 7 laminated on the active region layer 15 on its light emission region so that the thickness of a region of at least the active region layer 15 in the vicinity of the light emission edge is smaller than the thickness of the other region, and a second conductivity re-growth layer 9 which is laminated on the second conductivity cladding layer 7 or on the active region layer having the second conductivity cladding layer 7 not laminated thereon and which has a refractive index higher than that of the second conductivity cladding layer 7. COPYRIGHT: (C)2009,JPO&INPIT
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