MANUFACTURING METHOD OF EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial wafer having strong gettering performance without forming an epitaxial defect in an epitaxial layer and by forming BMD with high density in a bulk part. SOLUTION: In the manufacturing method of the epitaxial wafer, a silicon single crystal rod is grown by doping only carbon except a resistance-controlling dopant by a Czochralski method, after the silicon single crystal rod is sliced and processed into a silicon single crystal wafer, the silicon single crystal wafer is heat treated by using a rapid heating/rapid cooling (RTA) device, and then the epitaxial layer is formed on the single crystal wafer surface. COPYRIGHT: (C)2009,JPO&INPIT