| 摘要 |
An electrostatic discharge protection circuit includes a first NMOS transistor and a second NMOS transistor cascode-connected between a high-voltage supply terminal (VDD) and an input pad (PAD), a third NMOS transistor and a fourth NMOS transistor cascode-connected between PAD and a low-voltage supply terminal (VSS), a first capacitor connected between VDD and a node VT that is connected to gate terminals of the second NMOS transistor and the third NMOS transistor, a second capacitor connected between the node VT and PAD, and a diode connected between VDD and the node VT.
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