发明名称 |
PIXEL MATRIX WITH COMPENSATION OF OHMIC DROPS ON THE POWER SUPPLIES |
摘要 |
A matrix microelectronic device comprising: - a plurality of cells laid out according to a matrix, respectively comprising at least one current source formed by at least one current source transistor (T1), - a source electrode of said transistor is connected to a source biasing conductor line, - a gate electrode of the transistor (T1) is connected to a gate biasing conductor line (1071, 1072) among a plurality of conductor gate biasing lines, wherein the device further comprises means for biasing the conductor gate biasing lines comprising: - at least one first connection line (108, 218), - means for generating current (210) or voltage (110-120), positioned on at least one end of said first connection line, and provided to generate an evolution of potentials along said first connection line. |
申请公布号 |
WO2009043878(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
WO2008EP63159 |
申请日期 |
2008.10.01 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;PEIZERAT, ARNAUD;ARQUES, MARC;MARTIN, JEAN-LUC |
发明人 |
PEIZERAT, ARNAUD;ARQUES, MARC;MARTIN, JEAN-LUC |
分类号 |
H04N5/32;H04N5/369;H04N5/374 |
主分类号 |
H04N5/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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