| 摘要 |
A semiconductor device and manufacturing method thereof is provided to form a gate stack of a high power switching element and a low power control element at the same process by forming a recess region at the high power switching area. An N type deep well(11) is formed on the substrate(10) of the high power switching device area, and P-type body(13) domain is formed inside N type deep well. A sacrificial thermal oxide film(14a) and element isolation thermal oxide film(14b) are formed to be overlapped with a part of the P-type body region. The P-type well(17) and n-well(18) are formed inside of the low power device for controlling domain. A sacrificial thermal oxide film of the high power switching device area is removed through the wet etch process. A recess area is formed at a part of P-type body.
|
