| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an SOI structure capable of improving performance and reducing power consumption, and having a semiconductor element which is highly integrated and exhibits high performance. <P>SOLUTION: The semiconductor device includes a plurality of field-effect transistors which are respectively stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates. The semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer respectively. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
