| 摘要 |
A film formation method is provided for masking a part of a surface of an object and subsequently forming a film, by a chemical vapor deposition method, on a surface on which a film should be formed that is an exposed part of the surface of the object. The film formation method includes, upon film formation in a reaction chamber, masking the object by using a mask having a gas path formed therewithin and vents connecting the gas path with an outer surface of the mask, and controlling concentration distribution of raw material substances in the reaction chamber so that a film formation rate in the surface on which a film should be formed is constant by discharging or attenuating raw material gases, using the gas path within the mask, supplied to a surface which is covered with the mask and on which no film is formed.
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