NVM CELL ON SOI AND METHOD OF MANUFACTURE

摘要

A non-volatile memory (NVM) device (10) formed in a semiconductor-on-insulator (SOI) substrate (12) has a trap region (44, 46) on the source side (170) only to speed up the process of programming. During programming of an NVM device in partially depleted SOI, holes are generated that slow down the formation of electrons hot enough to jump to the storage layer of the NVM. To reduce this effect, the trap region is formed below the lightly doped portion (48) of the source region (70) and preferably extends to an area under the gate (26, 36) on the source side. This can be achieved using an angled implant of a neutral impurity, such as xenon, argon, or germanium, while masking (38, 40) the drain side (66, 68). The trap region (44, 46) thus extends under the gate (26, 36) on the source side (70) to recombine with holes that are generated during programming. The trap region (44, 46) also extends to contact the source (70).