发明名称 SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS
摘要 <p>A solid state imaging device, a method for manufacturing the same, and an imaging apparatus are to record an image with high quality by reducing a dark current without changing the potential of a peripheral circuit unit. A plurality of sensor units(12) are formed in a semiconductor substrate and convert incident light into an electric signal. A peripheral circuit unit(14) is formed in the semiconductor substrate to be located in a side of the sensor unit. A layer(22) with a negative fixed electric charge is formed in the light input side of the sensor unit and forms a hole accumulating layer on a light receiving surface of the sensor unit.</p>
申请公布号 KR20090034763(A) 申请公布日期 2009.04.08
申请号 KR20080097079 申请日期 2008.10.02
申请人 SONY CORPORATION 发明人 OHGISHI YUKO
分类号 H01L27/146;H01L31/10;H04N5/335;H04N5/361;H04N5/369 主分类号 H01L27/146
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