| 摘要 |
A method of forming the bonding pad of the semiconductor device is provided to form the metal material connected to the bonding pad with aluminum instead of copper and to solve the eutectic phase complexity according to the Cu deposition. The bonding pad(202) and passivation oxide film(204) are consecutively formed on the semiconductor substrate(200). The passivation oxide film is etched selectively to open the bonding pad. The diffusion barrier is evaporated in the upper side of the substrate. The aluminum film(210) is evaporated on the top of the diffusion barrier. The aluminum film is patterned and remains in the bond pad open area. The diffusion barrier can be formed with the titanium film(Ti)/TiN film(TiN). |
