发明名称 |
METHOD FOR PRODUCING ZINC OXIDE SEMICONDUCTOR CRYSTAL |
摘要 |
<p>A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10 -4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crytsallinity and including an extremely small amount of impurities at a high growth rate.</p> |
申请公布号 |
EP2045838(A1) |
申请公布日期 |
2009.04.08 |
申请号 |
EP20070767443 |
申请日期 |
2007.06.22 |
申请人 |
FUJIKURA, LTD.;CHIBA UNIVERSITY |
发明人 |
OMICHI, KOJI;KAIFUCHI, YOSHIKAZU;FUJIMAKI, MUNEHISA;YOSHIKAWA, AKIHIKO |
分类号 |
H01L21/363;C23C14/08;C23C14/46;C30B23/02;C30B29/16;H01L21/02 |
主分类号 |
H01L21/363 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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