| 摘要 |
In a nonvolatile memory device, data stored in a memory cell (21a, 21b) are associated to whether or not the memory cell is switchable between a first state and a second state. Memory cells are irreversibly programmed by applying an irreversible programming signal (I IRP ), such that the nonvolatile memory cells (21a) are made not switchable between the first state and the second state in response to the irreversible programming signal (I IRP ). Reading memory cells includes: assessing (100, 110, 120, 140, 150, 160) whether a memory cell (21a, 21b) is switchable between a first state and a second state; determining that a first irreversible logic value ("1") is associated to the memory cell (21a), if the memory cell (21a) is not switchable between the first state and the second state (130); and determining that a second irreversible logic value ("0") is associated to the memory cell (21b), if the memory cell (21b) is switchable between the first state and the second state (170).
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