| 摘要 |
<p>A method of forming the semiconductor device is provided to form the cluster type expansion recess of three dimensional structure and improve the process margin for forming the recess gate. The element isolation film(130) is formed in the semiconductor substrate(110) and then the active area is defined. The first recess for gate formation is formed in the active area. The first recess is slope-etched and the cluster type expansion recess is formed. To form the cluster type expansion recess, the semiconductor substrate is firstly etched to form the first recess(142). The bottom side of the first recess is slope-etched to form the first and the second recess(144). The bottom other side of the first recess is slope-etched to form the second and the third recess(146).</p> |
