SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor memory and manufacturing method thereof can prevent from the thermal agitation from being diffused due to the salicidation of the gate by covering the opening of the inter-gate insulation layer with the blocking layer of insulator. The gate insulating layer is formed on the semiconductor substrate. The bottom side gate(15b) is formed on the gate insulator layer. The insulating layer(16b) is formed on the bottom side gate between the gates. The silicidated upper gate(17b) is formed between the gate on the inter-gate insulation layer. The bottom side gate and upper gate are connected between the gates through the opening(13) of the insulating layer. The blocking layer(20) of insulator covers the opening. The blocking layer is smaller than the upper gate and larger than the opening.