METHOD AND LIQUID FOR SILICON ANISOTROPIC ETCHING

摘要

PROBLEM TO BE SOLVED: To provide a method of silicon anisotropic etching that forms a slope WA that makes 45 degrees against the main surface SF of a silicon substrate 5 with favorable flatness and smoothness, and to provide a silicon anisotropic etching liquid for use in the method.

SOLUTION: In the method of the silicon anisotropic etching, a silicon substrate 5 is subjected to etching processing using a silicon anisotropic etching liquid in which polyoxyalkylene alkyl ether is added at a rate of 0.1 to 10 ppm to a hydroxylation tetramethylammonium aqueous solution of 20 to 25 mass%.

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