| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of suppressing the leak of a carrier from a light emission region to a phase adjustment region, and a variable wavelength laser beam source using the same. SOLUTION: An active layer 13 and a waveguide 14 are continuously formed on a semiconductor substrate 11 from one end face 10a to the other end face 10b, the light emission region I and an optical output compensation region II are formed in a region on the side of the active layer 13 in this order toward the other end face 10b, and the phase adjustment region III is formed in a region on the side of the waveguide layer 14. The light emission region I, optical output compensation region II, and phase adjustment region III are electrically insulated. The light emission region I receives a first current I<SB>1</SB>to emit light, the phase adjustment region III receives a third current I<SB>3</SB>to change the phase of light guided from the active layer 13, and the optical output compensation region II receives a second current I<SB>2</SB>equal in potential to the phase adjustment region III, and amplifies and guides the light from the light emission region I to the waveguide layer 14. COPYRIGHT: (C)2011,JPO&INPIT
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