| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that combines COD (Catastrophic Optical Damage) suppression with kink suppression for higher output. SOLUTION: A semiconductor laser element 100 includes a first-conductivity-type clad layer 102, an active layer 103 with a quantum well structure, a first second-conductivity-type clad layer 104, a second- conductivity-type etching stop layer 105, a second second- conductivity-type clad layer 106 in a ridge stripe shape, and a second-conductivity-type contact layer 107 laminated in order on a first-conductivity-type semiconductor substrate 101. At a pair of resonator end-face parts of a resonator having a front end-face 140 and a rear end-face 141, end-face window regions 120 and 121 with Zn diffused therein are formed from the second second- conductivity-type clad layer 106 to the active layer 103. The light emission wavelength of the active layer 103 in the end-face window region 121 on the rear end-face is longer than that of the active layer 103 in the end-face window region 130 on the front end-face. COPYRIGHT: (C)2011,JPO&INPIT
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