发明名称 THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME
摘要 A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.
申请公布号 US2010308326(A1) 申请公布日期 2010.12.09
申请号 US20100790188 申请日期 2010.05.28
申请人 SAMSUNG ELECTRONICS CO., LTD.;KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KIM YOUNG-MIN;KIM BO-SUNG;JEONG YEON-TAEK;CHOI TAE-YOUNG;JANG SEON-PIL;CHO SEUNG-HWAN;AHN BO-KYOUNG;BAE BYEONG-SOO;SEO SEOK-JUN
分类号 H01L29/786;H01L21/34 主分类号 H01L29/786
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