发明名称 |
THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME |
摘要 |
A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other. |
申请公布号 |
US2010308326(A1) |
申请公布日期 |
2010.12.09 |
申请号 |
US20100790188 |
申请日期 |
2010.05.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KIM YOUNG-MIN;KIM BO-SUNG;JEONG YEON-TAEK;CHOI TAE-YOUNG;JANG SEON-PIL;CHO SEUNG-HWAN;AHN BO-KYOUNG;BAE BYEONG-SOO;SEO SEOK-JUN |
分类号 |
H01L29/786;H01L21/34 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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