STUCK SOS SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an SOS substrate which is greatly reduced in diffusion of an aluminum component from a sapphire substrate to a silicon substrate that causes a characteristic decrease of a semiconductor device. SOLUTION: The SOS substrate is manufactured by a method including at least a process of forming an ion implantation layer 3 by implanting ions from a surface of the silicon substrate 1, a process of performing surface activation processing on at least one of a surface of the sapphire substrate 2 and the ion-implanted surface of the silicon substrate 1 before sticking both the surfaces together, a process of sticking the surface of the silicon substrate 1 and the surface of the sapphire substrate 2 together, a process of obtaining a joint body 5 by performing thermal processing on the stuck substrates at a maximum temperature of 150 to 250°C, and a peeling process of peeling the joint body along the ion implantation layer and transferring a thin silicon film to the sapphire substrate. The Al concentration of a surface of the thin silicon film by an inductively coupled plasma mass spectrometry [ICP-MS] or atomic absorption analysis method is ≤2×1011atoms/cm2. COPYRIGHT: (C)2011,JPO&INPIT