| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device without adding a new process, and to provide a method of manufacturing the same. SOLUTION: This semiconductor device includes: a substrate 11 having a semiconductor element on the front side; a first insulation film 12 laminated on the substrate 11 to cover the semiconductor element; a contact plug 14 embedded in a through-hole penetrating the first insulation film 12 in the thickness direction through a barrier conductive layer 13 laminated on the inner surface of the through-hole; and one or more types of functional layers formed on the surface of the first insulation film 12 and electrically connected to the semiconductor element through the contact plug 14. In the semiconductor device, the functional layer includes: a first barrier layer 13 formed of a material identical to the material of the barrier conductive layer 13 and laminated in a predetermined region of the surface of the first insulation film 12; a second barrier conductive layer 16 laminated directly on the first barrier conductive layer 13, laminated thereon through a second insulation film 15, or laminated thereon in both the forms thereof; and a conductive layer 17 laminated on the second barrier conductive layer 16. COPYRIGHT: (C)2011,JPO&INPIT
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