发明名称 |
METHOD FOR A GATE LAST PROCESS |
摘要 |
A method for fabricating a semiconductor device is disclosed. The method includes providing a substrate; forming one or more gate structures over the substrate; forming a buffer layer over the substrate, including over the one or more gate structures; forming an etch stop layer over the buffer layer; forming a interlevel dielectric (ILD) layer over the etch stop layer; and removing a portion of the buffer layer, a portion of the etch stop layer, and a portion of the ILD layer over the one or more gate structures.
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申请公布号 |
US2010311231(A1) |
申请公布日期 |
2010.12.09 |
申请号 |
US20090478358 |
申请日期 |
2009.06.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
THEI KONG-BENG;CHUANG HARRY;LAI SU-CHEN;SHEN GARY |
分类号 |
H01L21/336;H01L21/306;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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