发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ELECTRODES OF A MULTILAYER STRUCTURE |
摘要 |
A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.
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申请公布号 |
US2010308366(A1) |
申请公布日期 |
2010.12.09 |
申请号 |
US20060517343 |
申请日期 |
2006.09.08 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KANG PIL GEUN;YI BONG IL;HAN JAE HO;JEON DONG MIN |
分类号 |
H01L33/02;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/36;H01L33/40 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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