HIGH WITHSTAND VOLTAGE SEMICONDUCTOR DEVICE AND CURRENT CONTROLLER USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high withstand voltage semiconductor device, wherein switching between the MOS operation and the IGBT operation can be detected with high accuracy, and thereby low loss driving can be ensured, and to provide a current controller equipped with the high withstand voltage semiconductor device. SOLUTION: The high withstand voltage semiconductor device includes an N-type resurf region 5 formed on the surface of a P--type substrate 1; a P-type base region 10; an N+-type emitter-source region 14; a gate insulating film 7, an N+-type drain region 32 and a P-type collector region 31 formed in the resurf region 5; a gate electrode 90 formed on the gate insulating film 7; a collector-drain electrode 110 connected electrically with the P-type collector region 31 and the N+-type drain region 32; a back gate electrode 62 electrically connected to the P-type base region 10; and an emitter-source electrode 61. electrically connected to the N+-type emitter-source region 14, wherein the P-type collector regions 31 and the N+-type drain regions 32 are arranged alternately so as to touch each other. COPYRIGHT: (C)2011,JPO&INPIT