| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that reduces internal loss of light, even without having to make a clad layer thick. SOLUTION: An n-type clad layer 21, n-side guide layer 22, active layer 23, p-side guide layer 24, first p-type clad layer 25, etching stop layer 26, second p-type clad layer 27, low-refractive index layer 28, and contact layer 29 are sequentially laminated on a substrate 10 starting from the side of the substrate 10. The low-refractive index layer 28 has a refractive index lower than that of the second p-type clad layer 27, while its thickness is set to a range≥0.1μm and≤0.5μm. COPYRIGHT: (C)2011,JPO&INPIT
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