| 摘要 |
A method of producing an epitaxial substrate for a solid-state imaging device, comprising: forming a gettering sink by injecting laser beam to a semiconductor substrate through one surface thereof, condensing the laser beam to an arbitrarily selected portion of the semiconductor substrate, thereby causing multi-photon absorption process to occur in the portion, and forming a gettering sink having a modified crystal structure; and epitaxially growing at least two epitaxial layers on the semiconductor substrate in which the gettering sink is formed.
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