| 摘要 |
A solid-state imaging device includes: a photoelectric conversion section (PCS) generating signal charge from light; a charge accumulating section (CAS) accumulating the signal charge; a first charge transfer section (CTS1) between the PCS and the CAS transferring the signal charge from the PCS to the CAS responsive to a control signal; and a second charge transfer section (CTS2) provided for the CAS to transfer the signal charge from the CAS in response to a control signal. The CAS includes: a charge accumulation gate electrode; and a gate insulating film between the charge accumulation gate electrode and a semiconductor substrate. The gate insulating film includes: a first region (R1) provided on a side of CTS1 in a region corresponding to the CAS; and a second region (R2) provided on a side of CTS2 in the region corresponding to the CAS. R2's gate insulating film is thicker than R1's.
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