发明名称 CAPACITOR SUBSTRATE STRUCTURE
摘要 The disclosed is a capacitor substrate structure to reduce the high leakage current and low insulation resistance issue of organic/inorganic hybrid materials with ultra-high dielectric constant. The insulation layer, disposed between two conductive layers, includes multi-layered dielectric layers. At least one of the dielectric layers has high dielectric constant, including high dielectric constant ceramic powder and conductive powder evenly dispersed in organic resin. The other dielectric layers can be organic resin, or further include high dielectric constant ceramic powder dispersed in the organic resin. The substrate has an insulation resistance of about 50 K&OHgr; and leakage current of below 100 μAmp under operational voltage.
申请公布号 US2010309607(A1) 申请公布日期 2010.12.09
申请号 US20090545786 申请日期 2009.08.21
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 LIU SHUR-FEN;CHEN MENG-HUEI;CHEN BIH-YIH;CHEN YUN-TIEN
分类号 H01G4/20;H01G4/06 主分类号 H01G4/20
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