| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device improved in cost performance by reducing side face capacitance without adding any new processes. <P>SOLUTION: The optical semiconductor device includes a semiconductor substrate including a first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer formed on the first-conductivity-type semiconductor layer, and converts a current made incident on a light reception region on the second-conductivity-type semiconductor layer to a current. The optical semiconductor device includes: a first-conductivity-type contact layer formed so that it abuts on the first-conductivity-type semiconductor layer through the second-conductivity-type semiconductor layer from an upper surface of the second-conductivity-type semiconductor layer; a first electrode that is provided on the contact layer to take out the current; a second electrode that is provided on the second-conductivity-type semiconductor layer and at a position separating from the first electrode to take out the current; an insulation film that is provided on the second-conductivity-type semiconductor layer and at a region between the first and second electrodes; and a third electrode provided on the insulation film. <P>COPYRIGHT: (C)2011,JPO&INPIT |
