| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device, by which even a step bunching with large unevenness is flattened and the need for a polishing process such as CMP (Chemical Mechanical Polishing) for the flattening is eliminated. SOLUTION: The method of manufacturing the silicon carbide semiconductor device includes: a first step of forming, on a silicon carbide surface, a first silicon carbide layer that becomes an active region and has a C/Si ratio at which a step bunching is apt to be generated on the surface; a second step of forming, on a surface of the first silicon carbide layer, a second silicon carbide layer that has a C/Si ratio at which the surface becomes flat; and a third step of etching away the second silicon carbide layer. COPYRIGHT: (C)2011,JPO&INPIT |
