| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that improves strain characteristics. SOLUTION: The semiconductor device includes: substrate potential controlling semiconductor layers 902 and 903 provided for a first FET 103 and a second FET 113, respectively; an element isolation region 901 that is provided in a semiconductor substrate and electrically isolates the substrate potential controlling semiconductor layers 902 and 903; a first substrate potential controlling electrode 108 and a second substrate potential controlling electrode 118 that are provided for the respective substrate potential controlling semiconductor layers 902 and 903; and first substrate potential controlling signal sources 109 and second substrate potential controlling signal sources 119 that are provided for the respective first substrate potential controlling electrode 108 and second substrate potential controlling electrode 118 and apply a high voltage or a low voltage to the respective substrate potential controlling electrodes. COPYRIGHT: (C)2011,JPO&INPIT
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