| 摘要 |
PROBLEM TO BE SOLVED: To provide a normally off operation type field-effect transistor which has low contact resistance, avoids an increase in on resistance, and maintains high channel mobility. SOLUTION: In the field-effect transistor, the thin layer portion 6a of an AlGaN barrier layer 6 is formed on the V defect 13 of a second GaN layer 4 and the non-growth region G1 of a third GaN layer 5 continuous with the V defect 13, and thereby made thinner than a flat portion 6b without performing etching. Consequently, etching damage never decreases the channel mobility and the increase in on resistance can be avoided. COPYRIGHT: (C)2011,JPO&INPIT
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