| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a coating type SiO<SB>2</SB>gate insulating film of high quality which can be formed at low temperature and contains no reaction residues, and a method of manufacturing a thin film transistor using the same. SOLUTION: The method of manufacturing the thin film transistor formed on a substrate and having a gate electrode, a gate insulating film, a metal oxide semiconductor layer, a source electrode, and a drain electrode is characterized in that the gate electrode has a microwave absorbing capability, and a precursor film is formed on the gate electrode by coating, and heated and converted to form the gate insulating film, the method of manufacturing the thin film transistor includes a microwave (0.3 to 50 GHz) irradiation process after a process of heating and converting the gate insulating film precursor into the gate insulating film. COPYRIGHT: (C)2011,JPO&INPIT
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