发明名称 |
METAL OXIDE SEMICONDUCTOR (MOS) SOLID STATE IMAGING DEVICE THAT INCLUDES A SURFACE LAYER FORMED BY IMPLANTING A HIGH CONCENTRATION OF IMPURITY DURING CREATION OF A PHOTODIODE, AND MANUFACTURING METHOD THEREOF |
摘要 |
A photodiode has a carrier accumulation layer of a second conductivity type and a surface area of a first conductivity type deposited in order from an inside towards a surface of a first conductivity type well region. A transfer transistor is formed so that a transfer gate electrode of the transfer transistor partially overlaps the surface layer of the photodiode and is formed above a surface of the first conductivity type well region with a gate insulating film therebetween. The surface layer includes a first surface layer, which partially overlaps the transfer gate electrode in the direction of the x-axis, and a second surface layer adjacent to the first surface layer. A concentration of the impurity of the first conductivity type is higher in the second surface layer than in the first surface layer.
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申请公布号 |
US2010308384(A1) |
申请公布日期 |
2010.12.09 |
申请号 |
US20100768428 |
申请日期 |
2010.04.27 |
申请人 |
TSUNO MORIKAZU;TACHIKAWA KEISHI |
发明人 |
TSUNO MORIKAZU;TACHIKAWA KEISHI |
分类号 |
H01L27/146;H01L21/265 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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