发明名称 SEMICONDUCTOR DEVICE
摘要 The first layer is located on the first electrode and has the first conductivity type. The second layer is located on the first layer and has the second conductivity type. The third layer is located on the second layer. The second electrode is located on the third layer. The fourth layer is located between the second layer and the third layer, and has the second conductivity type. The third layer includes the first portion and the second portion. The first portion has the second conductivity type and has a peak value of an impurity concentration higher than the peak value of the impurity concentration in the second layer. The second portion has the first conductivity type. The area of the second portion accounts for not less than 20% and not more than 95% of the total area of the first portion and the second portion.
申请公布号 US2010308446(A1) 申请公布日期 2010.12.09
申请号 US20100716427 申请日期 2010.03.03
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NAKAMURA KATSUMI
分类号 H01L29/861 主分类号 H01L29/861
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