发明名称 Semiconductor Device and Method of Forming an Interconnect Structure with TSV Using Encapsulant for Structural Support
摘要 A semiconductor device has a conductive via formed through in a first side of the substrate. A first interconnect structure is formed over the first side of the substrate. A semiconductor die or component is mounted to the first interconnect structure. An encapsulant is deposited over the first interconnect structure and semiconductor die or component. A portion of a second side of the substrate is removed to reduce its thickness and expose the TSV. A second interconnect structure is formed over the second side of the substrate. The encapsulant provides structural support while removing the portion of the second side of the substrate. The second interconnect structure is electrically connected to the conductive via. The second interconnect structure can include a redistribution layer to extend the conductivity of the conductive via. The semiconductor device is mounted to a printed circuit board through the second interconnect structure.
申请公布号 US2010308443(A1) 申请公布日期 2010.12.09
申请号 US20090480317 申请日期 2009.06.08
申请人 STATS CHIPPAC, LTD. 发明人 SUTHIWONGSUNTHORN NATHAPONG;MARIMUTHU PANDI C.;KU JAE HUN;OMANDAM GLENN;GOH HIN HWA;HENG KOCK LIANG;CAPARAS JOSE A.
分类号 H01L23/48;H01L21/56 主分类号 H01L23/48
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