SEMICONDUCTOR STORAGE DEVICE

摘要

Disclosed is a semiconductor storage device wherein, at the time of writing information on the memory cell of SPRAM composed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in the direction opposite to the direction of a current required for writing the information on the memory cell, then, the memory cell is supplied with a current required for writing. Thus, even if the same information is sequentially written on the memory cell, since the currents in the two directions are permitted to flow in a pair in the tunnel magnetoresistive element of the memory cell each time information is rewritten, deterioration of a film that constitutes the tunnel magnetoresistive element can be suppressed. Therefore, the reliability of the SPRAM can be improved.