发明名称 Halbleiterspeicher und dessen Betriebsverfahren
摘要 As operations of an SRAM, there are writing and reading operations, and only a portion of the whole memory operates during performing these operations, while another portion thereof stores a value. By lowering a current consumed in a period of storing this value, a semiconductor device with low power consumption is provided. The present invention provides a semiconductor device with reduced drive voltage in a period of storing a value, compared with a period of writing a value or a period of reading a value. Such a semiconductor device includes a power supply control circuit including an OR circuit electrically connected to a word line, an inverter circuit electrically connected to the OR circuit, and a transistor electrically connected to the OR circuit and the inverter circuit.
申请公布号 DE602006017777(D1) 申请公布日期 2010.12.09
申请号 DE20066017777T 申请日期 2006.07.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO. LTD. 发明人 IWATA, SYUSUKE
分类号 G11C5/14;G11C11/413 主分类号 G11C5/14
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