| 摘要 |
PURPOSE: A cell array of a semiconductor memory device and a manufacturing method thereof are provided to simplify a semiconductor manufacturing process by simultaneously forming a signal line and a contact hole with a self-arrangement contact process. CONSTITUTION: A plurality of active regions(100) are separated by a device isolation layer formed on a semiconductor substrate. A plurality of word lines(101) are formed on the semiconductor substrate. The word lines are arranged in parallel cross the plurality of active regions. A main source line(130) is electrically connected to the plurality of sub source lines.
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