Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures

摘要

A Group III nitride based semiconductor device is disclosed, comprising: a doped Group III nitride layer; and a gallium nitride based superlattice directly on the doped Group III nitride layer, the gallium nitride superlattice being doped with an n-type impurity and having at least two periods of alternating layers of In X Ga 1-X N and In Y Ga 1-Y N, where 0 ‰¤ X < 1 and X is not equal to Y and wherein a thickness of a first of the alternating layers is less than a thickness of a second of the alternating layers.